Ultra high density scanning electrical probe phase-change memory for archival storage

Wang, Lei, Wright, C. David, Shah, Purav ORCID logoORCID: https://orcid.org/0000-0002-0113-5690, Aziz, Mustafa M., Sebastian, Abu, Pozidis, Haralampos and Pauza, Andrew (2011) Ultra high density scanning electrical probe phase-change memory for archival storage. Japanese Journal of Applied Physics, 50 (9) . pp. 1-2. ISSN 0021-4922 [Article] (doi:10.1143/JJAP.50.09MD04)

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Abstract

The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in.² is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally.

Item Type: Article
Research Areas: A. > School of Science and Technology > Computer Science > SensoLab group
A. > School of Science and Technology > Computer and Communications Engineering
ISI Impact: 0
Item ID: 8154
Useful Links:
Depositing User: Purav Shah
Date Deposited: 22 Sep 2011 05:45
Last Modified: 16 Aug 2022 16:08
URI: https://eprints.mdx.ac.uk/id/eprint/8154

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