Ultra high density scanning electrical probe phase-change memory for archival storage
Wang, Lei, Wright, C. David, Shah, Purav 
ORCID: https://orcid.org/0000-0002-0113-5690, Aziz, Mustafa M., Sebastian, Abu, Pozidis, Haralampos and Pauza, Andrew
(2011)
Ultra high density scanning electrical probe phase-change memory for archival storage.
Japanese Journal of Applied Physics, 50
(9)
.
pp. 1-2.
ISSN 0021-4922
[Article]
(doi:10.1143/JJAP.50.09MD04)
|
PDF (JJAP)
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Abstract
The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in.² is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally.
| Item Type: | Article |
|---|---|
| Research Areas: | A. > School of Science and Technology > Computer Science > SensoLab group A. > School of Science and Technology > Computer and Communications Engineering |
| ISI Impact: | 0 |
| Item ID: | 8154 |
| Useful Links: | |
| Depositing User: | Purav Shah |
| Date Deposited: | 22 Sep 2011 05:45 |
| Last Modified: | 30 Nov 2022 00:46 |
| URI: | https://eprints.mdx.ac.uk/id/eprint/8154 |
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