Ultra-high density scanning electrical probe phase-change memory for archival storage.
Wang, Lei, Shah, Purav 
ORCID: https://orcid.org/0000-0002-0113-5690, Wright, C. David, Aziz, Mustafa M., Sebastian, Abu, Pozidis, Haralampos and Pauza, Andrew
(2010)
Ultra-high density scanning electrical probe phase-change memory for archival storage.
In: International Symposium on Optical Memory, October 2010, Taiwan.
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Abstract
In our work, we investigate the recording and readout performance of such phase-change memories and demonstrate experimental and simulation results which are based on a particular medium stack (Si/TiN/DLC/GST/DLC). The recording is achieved by injecting electrical current from a conductive tip to the storage medium to cause phase transformation through Joule heating, while readout is realised by sensing the current variation due to the significant differences in the electrical resistivity between the amorphous and crystalline phases. The experimental results clearly show that a crystalline bit with approximately 30nm diameter can be produced and readback, in good agreement with the corresponding simulations of the write/read processes.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Research Areas: | A. > School of Science and Technology > Computer and Communications Engineering A. > School of Science and Technology > Computer Science > SensoLab group |
| ISI Impact: | 0 |
| Item ID: | 7869 |
| Useful Links: | |
| Depositing User: | Purav Shah |
| Date Deposited: | 10 May 2011 10:51 |
| Last Modified: | 30 Nov 2022 00:59 |
| URI: | https://eprints.mdx.ac.uk/id/eprint/7869 |
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