The design of rewritable ultrahigh density scanning-probe phase-change memories

Wright, C. David, Wang, Lei, Shah, Purav ORCID logoORCID:, Aziz, Mustafa M., Varesi, Enrico, Bez, Roberto, Moroni, Maurizio and Cazzaniga, Francesco (2011) The design of rewritable ultrahigh density scanning-probe phase-change memories. IEEE Transactions on Nanotechnology, 10 (4) . pp. 900-912. ISSN 1536-125X [Article] (doi:10.1109/TNANO.2010.2089638)


A systematic design of practicable media suitable for rewritable, ultrahigh density (>;1Tbit/, high data rate (>;1Mbit/s/tip) scanning-probe phase-change memories is presented. The basic design requirements were met by a Si/TiN/Ge2Sb2Te5 (GST)/diamond-like carbon structure, with properly tailored electrical and thermal conductivities. Various alternatives for providing rewritability were investigated. In the first case, amorphous marks were written into a crystalline starting phase and subsequently erased by recrystallization, as in other already established phase-change memory technologies. Results imply that this approach is also appropriate for probe-based memories. However, experimentally, the successful writing of amorphous bits using scanning electrical probes has not been widely reported. In light of this, a second approach has been studied, that of writing crystalline bits in an amorphous starting matrix, with subsequent erasure by reamorphization. With conventional phase-change materials, such as continuous films of GST, this approach invariably leads to the formation of a crystalline “halo” surrounding the erased (reamorphized) region, with severe adverse consequences on the achievable density. Suppression of the “halo” was achieved using patterned media or slow-growth phase-change media, with the latter seemingly more viable.

Item Type: Article
Research Areas: A. > School of Science and Technology > Computer Science > SensoLab group
A. > School of Science and Technology > Computer and Communications Engineering
Item ID: 11175
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Depositing User: Teddy ~
Date Deposited: 05 Jul 2013 08:46
Last Modified: 13 Oct 2016 14:27

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