Ultra high density scanning electrical probe phase-change memory for archival storage

Wang, Lei and Wright, C. David and Shah, Purav and Aziz, Mustafa M. and Sebastian, Abu and Pozidis, Haralampos and Pauza, Andrew (2011) Ultra high density scanning electrical probe phase-change memory for archival storage. Japanese Journal of Applied Physics, 50 (9). pp. 1-2. ISSN 0021-4922

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Official URL: http://dx.doi.org/10.1143/JJAP.50.09MD04

Abstract

The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in.² is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally.

Item Type:Article
Research Areas:Middlesex University Schools and Centres > School of Science and Technology > Science & Technology
Citations on ISI Web of Science:0
ID Code:8154
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Deposited On:22 Sep 2011 05:45
Last Modified:20 Jul 2014 19:42

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