Ultra-high density scanning electrical probe phase-change memory for archival storage.
Wang, Lei and Shah, Purav and Wright, C. David and Aziz, Mustafa M. and Sebastian, Abu and Pozidis, Haralampos and Pauza, Andrew (2010) Ultra-high density scanning electrical probe phase-change memory for archival storage. In: International Symposium on Optical Memory, October 2010, Taiwan. (Unpublished)
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In our work, we investigate the recording and readout performance of such phase-change memories and demonstrate experimental and simulation results which are based on a particular medium stack (Si/TiN/DLC/GST/DLC). The recording is achieved by injecting electrical current from a conductive tip to the storage medium to cause phase transformation through Joule heating, while readout is realised by sensing the current variation due to the significant differences in the electrical resistivity between the amorphous and crystalline phases. The experimental results clearly show that a crystalline bit with approximately 30nm diameter can be produced and readback, in good agreement with the corresponding simulations of the write/read processes.
|Item Type:||Conference or Workshop Item (Paper)|
|Research Areas:||Middlesex University Schools and Centres > School of Science and Technology > Computer and Communications Engineering|
Middlesex University Schools and Centres > School of Science and Technology > Computer Science > SensoLab group
|Citations on ISI Web of Science:||0|
|Deposited On:||10 May 2011 10:51|
|Last Modified:||28 Nov 2014 17:12|
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