Phase-change technologies: from PCRAM to probe-storage to processors

Wright, C. David and Ashawaraya, P. and Ashwin, P. and Aziz, Mustafa M. and Hicken, R. J. and Kohary, K. I. and Liu, Y. and Marmier, A. S. H. and Shah, Purav and Vazquez, J. and Wang, Lei (2010) Phase-change technologies: from PCRAM to probe-storage to processors. In: European Phase Change and Ovonic Conference, 5-7 September, 2010, Milano.

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Abstract

Phase-change materials based on chalcogenide alloys, for example GeSbTe and AgInSbTe, show remarkable properties such as: the ability to be crystallized by pulses in the (hundreds of) femtoseconds region while at the same time withstanding spontaneous crystallization for many years; the ability to be cycled between phases 1012 times or more; the existence of a huge contrast between the refractive index of the phases; the existence of a huge electrical contrast between phases. These remarkable properties make phase-change materials suitable for a wide range of optical and electrical applications, for optical and electrical memories, for optical routers, for optical and electrical processors. In this paper we describe theoretical and experimental investigations of some of the key application areas, with a view to providing insights into the possible future use of phase-change materials.

Item Type:Conference or Workshop Item (Paper)
Keywords (uncontrolled):phase-change technologies, phase-change memories, phase-change processors, femtosecond switching
Research Areas:Middlesex University Schools and Centres > School of Science and Technology > Computer and Communications Engineering
Middlesex University Schools and Centres > School of Science and Technology > Computer Science > SensoLab group
ID Code:7761
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Deposited On:28 Apr 2011 08:18
Last Modified:03 Dec 2014 15:50

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